- 您现在的位置：买卖IC网 > Sheet目录464 > IXTP7N60PM (IXYS)MOSFET N-CH 600V 4A TO-220
IXTA7N60PM
IXTP7N60PM
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
ISOLATED TO-220 (I XTP...M )
g fs
C iss
C oss
V DS = 10V, I D = 3.5A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
4
7
1180
110
S
pF
pF
C rss
t d(on)
t r
t d(off)
Resistive Swithcing Times
V GS = 10V, V DS = 0.5
V DSS , I D = 7A
R G = 18 Ω (External)
11
20
27
65
pF
ns
ns
ns
1
2
3
t f
Q g(on)
26
20
ns
nC
Q gs
Q gd
R thJC
V GS = 10V, V DS = 0.5
V DSS , I D = 3.5A
7
7
nC
nC
3.0 ° C/W
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0V
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
I F = 7A, -di/dt = 100A/ μ s,
V R = 100V, V GS = 0V
500
7
28
1.5
A
A
V
ns
Notes:1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2 %.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTP7N60P
MOSFET N-CH 600V 7A TO-220
IXTP8N50PM
MOSFET N-CH 500V 4A TO-220
IXTP8N50P
MOSFET N-CH 500V 8A TO-220
IXTQ102N15T
MOSFET N-CH 150V 102A TO-3P
IXTQ110N055P
MOSFET N-CH 55V 110A TO-3P
IXTQ140N10P
MOSFET N-CH 100V 140A TO-3P
IXTQ14N60P
MOSFET N-CH 600V 14A TO-3P
IXTQ150N06P
MOSFET N-CH 60V 150A TO-3P
相关代理商/技术参数
IXTP7P15
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-220
IXTP7P20
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 7A I(D) | TO-220
IXTP80N10T
功能描述:MOSFET 80 Amps 100V 13.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP86N20T
功能描述:MOSFET 86 Amps 200V 29 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP88N085T
功能描述:MOSFET 88 Amps 85V 11.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP8N45MA
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220(5)
IXTP8N45MB
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220(5)
IXTP8N50MA
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-220(5)